Type Designator: TIP2955
- Persamaan Ic Mosfet Dan Scr Dan
- Persamaan Ic Mosfet Dan Screaming
- Persamaan Ic Mosfet Dan Scratch
- Persamaan Ic Mosfet Dan Screen
- Persamaan Ic Mosfet Dan Script
Download our persamaan ic dan transistor eBooks for free and learn more about persamaan ic dan transistor. These books contain exercises and tutorials to improve your practical skills, at all levels! Berikut ini Berbagai Macam Ilmu dan Teknik ' persamaan ic c945 '. Untuk membuatnya bisa melihat buku-buku. Persamaan transistor c945. Persamaan ic irfz44n framelight, persamaan ic mosfet dan scr iblasopacukup mudah dalam menemukan persamaan transistor c945 di toko toko komponen elektronika mengingat komponen ini merupakan salah satu komponen yang populer. Adalah untuk membantu mencari datasheet pada berbagai jenis transistor yang banyak dipakai pada pesawat tv, persamaan ic mosfet dan scr 10 3 2019 persamaan transistor nomor transistor eropa amerika bc107 bc108 bc109 bc147 bc148 bc149 bc171 bc172 bc173 bc182 bc183 bc184 bc207 bc208 bc209 bc237 bc238 bc239 bc317 bc318 bc319 bc107 bc107 bc109.
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO218
TIP2955 Transistor Equivalent Substitute - Cross-Reference Search
Persamaan Ic Mosfet Dan Scr Dan
TIP2955 Datasheet (PDF)
0.1. tip2955-3055.pdf Size:47K _st
TIP2955TIP3055 COMPLEMENTARY SILICON POWERTRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICESDESCRIPTION The TIP3055 is a silicon epitaxial-base planarNPN transistor mountend in TO-218 plasticpackage and intented for power switchingcircuits, series and shunt regulators, output3stages and hi-fi amplifiers.2The complementary PNP type is the TIP2955
0.2. tip2955.pdf Size:37K _st
TIP2955TIP3055COMPLEMENTARY SILICON POWERTRANSISTORSn SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe TIP3055 is a silicon epitaxial-base planarNPN transistor mountend in TO-218 plasticpackage and intented for power switchingcircuits, series and shunt regulators, outputstages and hi-fi amplifiers.3The complementary PNP type is the TIP2955.21TO-218INTERNAL SCHEMATI
0.3. tip2955 tip3055.pdf Size:87K _st
TIP2955TIP3055Complementary power transistorsFeatures Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose Audio Amplifier321DescriptionTO-247The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications.Figure 1. Internal sche
0.4. tip3055 tip2955.pdf Size:61K _onsemi
TIP3055 (NPN),TIP2955 (PNP)Complementary SiliconPower TransistorsDesigned for general-purpose switching and amplifier applications.http://onsemi.comFeatures DC Current Gain - 15 AMPEREhFE = 20 - 70 @ IC POWER TRANSISTORS= 4.0 AdcCOMPLEMENTARY SILICON Collector-Emitter Saturation Voltage - 60 VOLTS, 90 WATTSVCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excell
0.5. tip2955.pdf Size:81K _bourns
TIP2955PNP SILICON POWER TRANSISTOR Designed for Complementary Use with the SOT-93 PACKAGE(TOP VIEW)TIP3055 Series 90 W at 25C Case TemperatureB1 15 A Continuous Collector CurrentC 2 Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maximum ratings at 25C case temperature (unless otherwi
0.6. tip2955 tip3055.pdf Size:107K _mospec
AAA
0.7. tip2955f tip3055f.pdf Size:290K _cdil
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPOWER TRANSISTORS TIP2955F PNPTIP3055F NPNTO- 3P Fully IsolatedPlastic PackageBCEDesigned for General Purpose Switching and Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector-Emitter Voltage VCEO 60 VCollector-Emitter Voltage VCER 70 VCollector-
0.8. tip2955.pdf Size:221K _inchange_semiconductor
isc Silicon PNP Power Transistor TIP2955DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = -4AFE CCollector-Emitter Saturation Voltage-: V )= -1.1 V(Max)@ I = -4ACE(sat CComplement to Type TIP3055Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifi
0.9. tip2955t.pdf Size:217K _inchange_semiconductor
isc Silicon PNP Power Transistor TIP2955TDESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 0.8V(Max)@ I = 4ACE(sat CComplement to Type TIP2955TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifier
Datasheet: TIP147T, TIP150, TIP151, TIP152, TIP160, TIP161, TIP162, TIP29, C102, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F, TIP30, TIP3054.
LIST
Last Update
BJT: TMPTH81 | TMPTA93 | TMPTA92 | TMPTA70 | TMPTA64 | TMPTA63 | TMPTA56 | TMPTA55 | TMPT5401 | TMPT5087 | TMPT5086 | TMPT4403 | TMPT4402 | TMPT4126 | TMPT4125 | TMPT3906 | TMPT3905 | TMPT3798A | TMPT3798 | TMPT3638A | TMPT3638
Type Designator: 2SK2850-01
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 6 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 50 nS
Persamaan Ic Mosfet Dan Screaming
Drain-Source Capacitance (Cd): 140 pF
Maximum Drain-Source On-State Resistance (Rds): 1.87 Ohm
Package: TO-3P
2SK2850-01 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK2850-01 Datasheet (PDF)
0.1. 2sk2850-01.pdf Size:316K _fuji
7.1. 2sk2850.pdf Size:224K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK2850DESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
8.1. 2sk2851.pdf Size:55K _1
2SK2851Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-4781st. EditionFeatures Low on-resistanceRDS(on) = 0.055 typ. (at VGS = 10 V, ID = 2.5 A) 4V gate drive devices. Large current capacitanceID = 5 AOutlineTO-92MOD.DG1. Source322. Drain13. GateS2SK2851Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to
8.2. 2sk2855.pdf Size:125K _toshiba
2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNITDrain-Source Voltage VDSS 10 VGate-Source Voltage VGSS 6 VDrain Current ID 1.0 ADrain Power Dissipation PD* 0.5 WChannel Temperature Tch 150 CStorage Temperature Range Tstg -55~150 C*:
8.3. 2sk2854.pdf Size:125K _toshiba
2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNITDrain-Source Voltage VDSS 10 VGate-Source Voltage VGSS 6 VDrain Current ID 0.5 ADrain Power Dissipation PD* 0.5 WChannel Temperature Tch 150 CStorage Temperature Range Tstg -55~150 C *:
8.4. 2sk2859.pdf Size:365K _sanyo
Ordering number:EN5851N Channel Silicon MOSFET2SK2859Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low On resistance.unit:mm Ultrahigh-speed switching.2149 4V drive.[2SA2859]8 51 : No Contact2 : Source3 : No Contact4 : Gate140.25 : Drain5.06 : Drain7 : Drain8 : Drain0.595 1.270.43SANYO : SOP8SpecificationsAbsolut
8.5. 2sk2857c.pdf Size:192K _renesas
Preliminary Data Sheet 2SK2857C R07DS1261EJ0200Rev.2.00N-CHANNEL MOSFET FOR SWITCHING Jun 11, 2015Description The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source. Features Directly driven by a 4.0 V power source. Low on-state resistance RDS(on)1 = 105 m MAX. (VGS =
8.6. 2sk2857.pdf Size:188K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.7. 2sk2858.pdf Size:238K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.8. 2sk2857.pdf Size:1046K _kexin
SMD Type MOSFETN-Channel MOSFET2SK28571.70 0.1 Features VDS (V) = 60V ID = 4 A0.42 0.1 RDS(ON) 150m (VGS = 10V) 0.46 0.1 RDS(ON) 220m (VGS = 4V)1.GateDrain2.Drain3.SourceInternalGate DiodeGateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-Sou
Datasheet: VN0610L, VN10KE, VN10KM, VN2222L, TN0601L, VN0606L, VN66AFD, 2SK2671, 2SK163, 2SK2148-01R, 2SK740, STK0765BF, SMK0160, SMK0160D, SMK0160I, SMK0160IS, SMK0170.
Persamaan Ic Mosfet Dan Scratch
LIST
Last Update
Persamaan Ic Mosfet Dan Screen
MOSFET: MESS84 | MEE4294-G | MEE3710-G | MEE15N10-G | ME95N03T-G | ME95N03T | ME95N03-G | ME95N03 | ME9435A-G | ME9435A | ME9435-G | ME9435 | ME90N03-G | ME90N03 | ME85P03-G | ME85P03